Characterization of highly doped Ga0.86 In0.14As0.13Sb0.87 grown by liquid phase epitaxy

by Díaz-Reyes,J., Galván-Arellano,M., Mendoza-Alvarez,J.G., Arias-Cerón,J.S., Herrera-Pérez,J.L., López-Cruz,E.
Published 2017