Raman scattering and electrical characterization of AlGaAs/GaAs rectangular and triangular barriers grown by MOCVD

by Díaz-Reyes,J., Galván-Arellano,M., Peña-Sierra,R.
Published 2010

Crecimiento epitaxial de un pozo cuántico de Al xGa1-xAs/GaAs/Al xGa1-xAs utilizando vapores metalorgánicos y arsénico sólido como precursores

by Castillo-Ojeda,R., Galván-Arellano,M., Díaz-Reyes,J.
Published 2013

Growth of AlχGa1–χ As/GaAs structures for single quantum wells by solid arsenic MOCVD system

by Castillo Ojeda,R., Manrique Moreno,S., Galván Arellano,M., Peña-Sierra,R.
Published 2007

Estudio de las películas de paladio como barreras de difusión para contactos ohmicos en semiconductores III-V

by Galván-Arellano,M., Kudriavtsev,I., Romero-Paredes,G., Peña-Sierra,R., Díaz-Reyes,J.
Published 2005

Growth and characterization of Cd1-X ZnX Te (0 ≤ x ≤ 1) nanolayers grown by isothermal closed space atomic layer deposition on GaSb and GaAs

by Castillo Ojeda,R.S., Díaz-Reyes,J., Galván-Arellano,M., Rivera-Hernández,K.N., Villa-Ramírez,M.S., Luna-Suarez,S.
Published 2018

Characterization of highly doped Ga0.86 In0.14As0.13Sb0.87 grown by liquid phase epitaxy

by Díaz-Reyes,J., Galván-Arellano,M., Mendoza-Alvarez,J.G., Arias-Cerón,J.S., Herrera-Pérez,J.L., López-Cruz,E.
Published 2017