Ballistic transport in semiconductor quantum wires in the presence of defects
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the Landauer formalism. We consider the effects on the transport properties inside semiconductor quantum waveguides of different shapes when a defect is located either in the wire region or in the quasi-two-dimensional region. We observe changes on the plateau's threshold when the defect is placed inside the wire and lowering of the conductance plateaus themselves below the conductance quantum G0 =2e² /h when the defect is outside the wire.
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Sociedade Brasileira de Física
2002
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oai:scielo:S0103-973320020002000122002-11-26Ballistic transport in semiconductor quantum wires in the presence of defectsRocha,A. R.Brum,J. A.We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the Landauer formalism. We consider the effects on the transport properties inside semiconductor quantum waveguides of different shapes when a defect is located either in the wire region or in the quasi-two-dimensional region. We observe changes on the plateau's threshold when the defect is placed inside the wire and lowering of the conductance plateaus themselves below the conductance quantum G0 =2e² /h when the defect is outside the wire.info:eu-repo/semantics/openAccessSociedade Brasileira de FísicaBrazilian Journal of Physics v.32 n.2a 20022002-06-01info:eu-repo/semantics/articletext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200012en10.1590/S0103-97332002000200012 |
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Rocha,A. R. Brum,J. A. |
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Rocha,A. R. Brum,J. A. Ballistic transport in semiconductor quantum wires in the presence of defects |
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Rocha,A. R. Brum,J. A. |
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Rocha,A. R. |
title |
Ballistic transport in semiconductor quantum wires in the presence of defects |
title_short |
Ballistic transport in semiconductor quantum wires in the presence of defects |
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Ballistic transport in semiconductor quantum wires in the presence of defects |
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Ballistic transport in semiconductor quantum wires in the presence of defects |
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Ballistic transport in semiconductor quantum wires in the presence of defects |
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ballistic transport in semiconductor quantum wires in the presence of defects |
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We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the Landauer formalism. We consider the effects on the transport properties inside semiconductor quantum waveguides of different shapes when a defect is located either in the wire region or in the quasi-two-dimensional region. We observe changes on the plateau's threshold when the defect is placed inside the wire and lowering of the conductance plateaus themselves below the conductance quantum G0 =2e² /h when the defect is outside the wire. |
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Sociedade Brasileira de Física |
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2002 |
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http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200012 |
work_keys_str_mv |
AT rochaar ballistictransportinsemiconductorquantumwiresinthepresenceofdefects AT brumja ballistictransportinsemiconductorquantumwiresinthepresenceofdefects |
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1756407250369380352 |