Ballistic transport in semiconductor quantum wires in the presence of defects
We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the Landauer formalism. We consider the effects on the transport properties inside semiconductor quantum waveguides of different shapes when a defect is located either in the wire region or in the quasi-two-dimensional region. We observe changes on the plateau's threshold when the defect is placed inside the wire and lowering of the conductance plateaus themselves below the conductance quantum G0 =2e² /h when the defect is outside the wire.
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| Main Authors: | , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedade Brasileira de Física
2002
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200012 |
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| Summary: | We present calculations of the conductance in semiconductor quasi-one-dimensional systems using the Landauer formalism. We consider the effects on the transport properties inside semiconductor quantum waveguides of different shapes when a defect is located either in the wire region or in the quasi-two-dimensional region. We observe changes on the plateau's threshold when the defect is placed inside the wire and lowering of the conductance plateaus themselves below the conductance quantum G0 =2e² /h when the defect is outside the wire. |
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