Electrical properties of resistive switches based on Ba1-xSr xTiO3 thin films prepared by RF co-sputtering
In this work, we propose the use of Ba1-xSr xTiO3(0 ≤ x ≤ 1) thin films for the construction of MIM (metal-insulator-metal) heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba1-xSr xTiO3 thin films was done by the rf co-sputtering technique using two magnetron sputtering cathodes with BaTiO3 and SrTiO3 targets. The chemical composition (x parameter) in the deposited Ba1-xSr xTiO3 thin films was varied through the rf power applied to the targets. The constructed MIM heterostructures were Al/Ba1-xSr xTiO3/nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba1-xSr xTiO3 thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; SEM micrographs showed that Ba1-xSr xTiO3 thin films were uniform without cracks or pinholes. Additionally, the analysis of the x-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO3 lattice and the obtainment of crystalline films for the entire range of the x values.
| Main Authors: | , , , , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedad Mexicana de Física
2010
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| Online Access: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2010000500007 |
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| Summary: | In this work, we propose the use of Ba1-xSr xTiO3(0 ≤ x ≤ 1) thin films for the construction of MIM (metal-insulator-metal) heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba1-xSr xTiO3 thin films was done by the rf co-sputtering technique using two magnetron sputtering cathodes with BaTiO3 and SrTiO3 targets. The chemical composition (x parameter) in the deposited Ba1-xSr xTiO3 thin films was varied through the rf power applied to the targets. The constructed MIM heterostructures were Al/Ba1-xSr xTiO3/nichrome. The I-V measurements of the heterostructures showed that their hysteretic characteristics change depending on the Ba/Sr ratio of the Ba1-xSr xTiO3 thin films; the Ba/Sr ratio was determined by employing the energy dispersive spectroscopy; SEM micrographs showed that Ba1-xSr xTiO3 thin films were uniform without cracks or pinholes. Additionally, the analysis of the x-ray diffraction results indicated the substitutional incorporation of Sr into the BaTiO3 lattice and the obtainment of crystalline films for the entire range of the x values. |
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