Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film
Cr(1-x)Alx exhibits semiconducting behavior for x=0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr0.80Al0.20 thin film show several features in the band region, including a gap at the Fermi energy (Ef) for which the valence band edge is 95 +- 14 meV below Ef. Theory agrees well with the valence band measurements, and shows an incomplete gap at Ef due to the hole band at M shifting almost below Ef.
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | article biblioteca |
| Language: | en_US |
| Published: |
American Physical Society
2010-12-03
|
| Subjects: | alloy, chromium, aluminum, electronic structure, photoemission, density functional theory, CrAl, band gap, |
| Online Access: | https://hdl.handle.net/1813/19474 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| id |
dig-cornell-us-181319474 |
|---|---|
| record_format |
koha |
| spelling |
dig-cornell-us-1813194742015-07-08T04:17:15Z Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film Boekelheide, Z. Gray, A. X. Papp, C. Balke, B. Stewart, D. A. Ueda, S. Kobayashi, K. Hellman, F. Fadley, C. S. alloy chromium aluminum electronic structure photoemission density functional theory CrAl band gap Cr(1-x)Alx exhibits semiconducting behavior for x=0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr0.80Al0.20 thin film show several features in the band region, including a gap at the Fermi energy (Ef) for which the valence band edge is 95 +- 14 meV below Ef. Theory agrees well with the valence band measurements, and shows an incomplete gap at Ef due to the hole band at M shifting almost below Ef. This work was supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231 and the Nanotechnology Network Project, MEXT, Japan. C. Papp and B. Balke thank the Humboldt foundation for support. Calculations were done at the Cornell Nanoscale Facility, part of the National Nanotechnology Infrastructure Network (NNIN) funded by NSF. HXPS experiments were approved at the NIMS Beamline Station (Proposal No. 2009A4906) 2010-12-10T20:22:47Z 2010-12-10T20:22:47Z 2010-12-03 article Z. Boekelheide, A. X. Gray, C. Papp, B. Balke, D. A. Stewart, S. Ueda, K. Kobayashi, F. Hellman, and C. S. Fadley, Physical Review Letters, 105, 236404 (2010) DOI:10.1103/PhysRevLett.105.236404 https://hdl.handle.net/1813/19474 en_US application/pdf American Physical Society |
| institution |
CORNELL US |
| collection |
DSpace |
| country |
Estados Unidos |
| countrycode |
US |
| component |
Bibliográfico |
| access |
En linea |
| databasecode |
dig-cornell-us |
| tag |
biblioteca |
| region |
America del Norte |
| libraryname |
Biblioteca de Cornell |
| language |
en_US |
| topic |
alloy chromium aluminum electronic structure photoemission density functional theory CrAl band gap alloy chromium aluminum electronic structure photoemission density functional theory CrAl band gap |
| spellingShingle |
alloy chromium aluminum electronic structure photoemission density functional theory CrAl band gap alloy chromium aluminum electronic structure photoemission density functional theory CrAl band gap Boekelheide, Z. Gray, A. X. Papp, C. Balke, B. Stewart, D. A. Ueda, S. Kobayashi, K. Hellman, F. Fadley, C. S. Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film |
| description |
Cr(1-x)Alx exhibits semiconducting behavior for x=0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr0.80Al0.20 thin film show several features in the band region, including a gap at the Fermi energy (Ef) for which the valence band edge is 95 +- 14 meV below Ef. Theory agrees well with the valence band measurements, and shows an incomplete gap at Ef due to the hole band at M shifting almost below Ef. |
| format |
article |
| topic_facet |
alloy chromium aluminum electronic structure photoemission density functional theory CrAl band gap |
| author |
Boekelheide, Z. Gray, A. X. Papp, C. Balke, B. Stewart, D. A. Ueda, S. Kobayashi, K. Hellman, F. Fadley, C. S. |
| author_facet |
Boekelheide, Z. Gray, A. X. Papp, C. Balke, B. Stewart, D. A. Ueda, S. Kobayashi, K. Hellman, F. Fadley, C. S. |
| author_sort |
Boekelheide, Z. |
| title |
Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film |
| title_short |
Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film |
| title_full |
Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film |
| title_fullStr |
Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film |
| title_full_unstemmed |
Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film |
| title_sort |
band gap and electronic structure of an epitaxial, semiconducting cr0.80al0.20 thin film |
| publisher |
American Physical Society |
| publishDate |
2010-12-03 |
| url |
https://hdl.handle.net/1813/19474 |
| work_keys_str_mv |
AT boekelheidez bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm AT grayax bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm AT pappc bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm AT balkeb bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm AT stewartda bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm AT uedas bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm AT kobayashik bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm AT hellmanf bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm AT fadleycs bandgapandelectronicstructureofanepitaxialsemiconductingcr080al020thinfilm |
| _version_ |
1762930875594440704 |