Band Gap and Electronic structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film
Cr(1-x)Alx exhibits semiconducting behavior for x=0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr0.80Al0.20 thin film show several features in the band region, including a gap at the Fermi energy (Ef) for which the valence band edge is 95 +- 14 meV below Ef. Theory agrees well with the valence band measurements, and shows an incomplete gap at Ef due to the hole band at M shifting almost below Ef.
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| Main Authors: | , , , , , , , , |
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| Format: | article biblioteca |
| Language: | en_US |
| Published: |
American Physical Society
2010-12-03
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| Subjects: | alloy, chromium, aluminum, electronic structure, photoemission, density functional theory, CrAl, band gap, |
| Online Access: | https://hdl.handle.net/1813/19474 |
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| Summary: | Cr(1-x)Alx exhibits semiconducting behavior for x=0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr0.80Al0.20 thin film show several features in the band region, including a gap at the Fermi energy (Ef) for which the valence band edge is 95 +- 14 meV below Ef. Theory agrees well with the valence band measurements, and shows an incomplete gap at Ef due to the hole band at M shifting almost below Ef. |
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