Structural quality in single crystalline CdSe ingots grown by PVT
ABSTRACT CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor.
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| Main Authors: | , , , , , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro
2020
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762020000100339 |
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