Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.
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| Main Authors: | , , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
ABM, ABC, ABPol
2018
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000400206 |
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