Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity

Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity

The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.

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Main Authors: Oliveira,Felipe Souza, Favero,Ana Carolina, Renosto,Sergio Tuan, Luz,Mário Sérgio da, Santos,Carlos Alberto Moreira dos
Format: Digital revista
Language:English
Published: ABM, ABC, ABPol 2018
Online Access:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000400206
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spelling oai:scielo:S1516-143920180004002062018-05-18Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical ResistivityOliveira,Felipe SouzaFavero,Ana CarolinaRenosto,Sergio TuanLuz,Mário Sérgio daSantos,Carlos Alberto Moreira dos strontium titanate crystal growth solid-state kinetics The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.info:eu-repo/semantics/openAccessABM, ABC, ABPolMaterials Research v.21 n.4 20182018-01-01info:eu-repo/semantics/articletext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000400206en10.1590/1980-5373-mr-2017-0887
institution SCIELO
collection OJS
country Brasil
countrycode BR
component Revista
access En linea
databasecode rev-scielo-br
tag revista
region America del Sur
libraryname SciELO
language English
format Digital
author Oliveira,Felipe Souza
Favero,Ana Carolina
Renosto,Sergio Tuan
Luz,Mário Sérgio da
Santos,Carlos Alberto Moreira dos
spellingShingle Oliveira,Felipe Souza
Favero,Ana Carolina
Renosto,Sergio Tuan
Luz,Mário Sérgio da
Santos,Carlos Alberto Moreira dos
Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
author_facet Oliveira,Felipe Souza
Favero,Ana Carolina
Renosto,Sergio Tuan
Luz,Mário Sérgio da
Santos,Carlos Alberto Moreira dos
author_sort Oliveira,Felipe Souza
title Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
title_short Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
title_full Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
title_fullStr Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
title_full_unstemmed Kinetics of Vacancy Doping in SrTiO3 Studied by in situ Electrical Resistivity
title_sort kinetics of vacancy doping in srtio3 studied by in situ electrical resistivity
description The kinetics of annealing to transform stoichiometric SrTiO3 insulator into a vacancy-doped semiconductor-superconductor was revisited by in situ electrical resistivity measurements. SrTiO3 single crystals were grown by Floating Zone Method. Using a homemade apparatus several electrical resistivity as a function of time were measured at different temperatures, which allows one to study the creation of vacancies during annealing under vacuum. The activation energy for the oxygen vacancies formation/charge doping in SrTiO3 was estimated as 1.4±0.3 eV using solid-state kinetics approach.
publisher ABM, ABC, ABPol
publishDate 2018
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392018000400206
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AT faveroanacarolina kineticsofvacancydopinginsrtio3studiedbyinsituelectricalresistivity
AT renostosergiotuan kineticsofvacancydopinginsrtio3studiedbyinsituelectricalresistivity
AT luzmariosergioda kineticsofvacancydopinginsrtio3studiedbyinsituelectricalresistivity
AT santoscarlosalbertomoreirados kineticsofvacancydopinginsrtio3studiedbyinsituelectricalresistivity
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