Effect of impurities on the Raman scattering of 6H-SiC crystals
Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.
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| Main Authors: | , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
ABM, ABC, ABPol
2012
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000600003 |
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