Ferroelectric thin films using oxides as raw materials
This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Infrared Spectroscopy (IR) and Rutherford Backscattering Spectroscopy (RBS). The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.
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| Main Authors: | , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
ABM, ABC, ABPol
1999
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004 |
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