Electrical Parameters Extraction of CMOS Floating-Gate Inverters
This work provides an accurate methodology for extracting the floating-gate gain factory, of CMOS floating-gate inverters with a clock-driven switch for accessing temporarilly to the floating-gate. With the methodology proposed in this paper, the γ factor and other parasitic capacitances coupled to the floating-gate can be easily extracted in a mismatch-free approach. This parameter plays an important role in modern analog and mixed-signal CMOS circuits, since it limits the circuit performance. Theoretical and measured values using two test cells, fabricated in a standard double poly double metal CMOS AMI-ABN process with 1.2 µm design rules, were compared. The extracted parameters can be incorporated into floating-gate PS pice macromodels for obtaining accurate electrical simulation.
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Universidad Nacional Autónoma de México, Facultad de Ingeniería
2010
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oai:scielo:S1405-774320100003000072010-10-11Electrical Parameters Extraction of CMOS Floating-Gate InvertersMolinar-Solís,J.E.Ponce-Ponce,V.H.García-Lozano,R.Z.Díaz-Sánchez,A.Rocha-Pérez,J.M. FG-inverter neuMOS floating-gate This work provides an accurate methodology for extracting the floating-gate gain factory, of CMOS floating-gate inverters with a clock-driven switch for accessing temporarilly to the floating-gate. With the methodology proposed in this paper, the γ factor and other parasitic capacitances coupled to the floating-gate can be easily extracted in a mismatch-free approach. This parameter plays an important role in modern analog and mixed-signal CMOS circuits, since it limits the circuit performance. Theoretical and measured values using two test cells, fabricated in a standard double poly double metal CMOS AMI-ABN process with 1.2 µm design rules, were compared. The extracted parameters can be incorporated into floating-gate PS pice macromodels for obtaining accurate electrical simulation.info:eu-repo/semantics/openAccessUniversidad Nacional Autónoma de México, Facultad de IngenieríaIngeniería, investigación y tecnología v.11 n.3 20102010-09-01info:eu-repo/semantics/articletext/htmlhttp://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1405-77432010000300007en |
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Molinar-Solís,J.E. Ponce-Ponce,V.H. García-Lozano,R.Z. Díaz-Sánchez,A. Rocha-Pérez,J.M. |
spellingShingle |
Molinar-Solís,J.E. Ponce-Ponce,V.H. García-Lozano,R.Z. Díaz-Sánchez,A. Rocha-Pérez,J.M. Electrical Parameters Extraction of CMOS Floating-Gate Inverters |
author_facet |
Molinar-Solís,J.E. Ponce-Ponce,V.H. García-Lozano,R.Z. Díaz-Sánchez,A. Rocha-Pérez,J.M. |
author_sort |
Molinar-Solís,J.E. |
title |
Electrical Parameters Extraction of CMOS Floating-Gate Inverters |
title_short |
Electrical Parameters Extraction of CMOS Floating-Gate Inverters |
title_full |
Electrical Parameters Extraction of CMOS Floating-Gate Inverters |
title_fullStr |
Electrical Parameters Extraction of CMOS Floating-Gate Inverters |
title_full_unstemmed |
Electrical Parameters Extraction of CMOS Floating-Gate Inverters |
title_sort |
electrical parameters extraction of cmos floating-gate inverters |
description |
This work provides an accurate methodology for extracting the floating-gate gain factory, of CMOS floating-gate inverters with a clock-driven switch for accessing temporarilly to the floating-gate. With the methodology proposed in this paper, the γ factor and other parasitic capacitances coupled to the floating-gate can be easily extracted in a mismatch-free approach. This parameter plays an important role in modern analog and mixed-signal CMOS circuits, since it limits the circuit performance. Theoretical and measured values using two test cells, fabricated in a standard double poly double metal CMOS AMI-ABN process with 1.2 µm design rules, were compared. The extracted parameters can be incorporated into floating-gate PS pice macromodels for obtaining accurate electrical simulation. |
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Universidad Nacional Autónoma de México, Facultad de Ingeniería |
publishDate |
2010 |
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http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1405-77432010000300007 |
work_keys_str_mv |
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