Titanium impurities in silicon, diamond, and silicon carbide
We carried a theoretical investigation on the electronic and structural properties of titanium impurities in silicon, diamond, and silicon carbide. The calculations were performed using the spin-polarized full-potential linearized augmented plane wave method in the supercell approach. The atomic configurations and transition and formation energies of isolated Ti impurities were computed.
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| Main Authors: | , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedade Brasileira de Física
2004
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400016 |
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