Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
We calculate the characteristic current-voltage curve of a tunneling device based on semimagnetic semiconductor materials. The device is a heterostructure with layers of Cd1<FONT FACE=Symbol>-</FONT> x Mn x Te in which the magnetic ions Mn2+ interact strongly with the conducting electrons via the s-d exchange interaction. Thermal fluctuations of Mn2+ magnetic moments cause spin-dependent electron scattering that modifies the characteristic current-voltage curve. Our calculation shows how this electron-ion scattering is expected to affect the spin dynamics in transport measurements.
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| Main Authors: | , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedade Brasileira de Física
1999
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400016 |
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