Electrochemical Deposition of the Single Phase Tlx Cu3 - x Se2 Thin Films
In spite of selenide semiconductors having a wide application area, TlCu2 Se2 (TCSe) is poorly studied and its synthesis by non-vacuum or thermic methodology in film form is non-existent. Generally, the main problems of applying these TCSe compounds are related to complicated single phase growth, and the great time consuming and non-scalable fabrication method. In this work, the facile, fast, scalable and new electrochemical deposition of this material was proposed as a workaround for these main problems and obtaining single phase thin film. Thus, the electrodeposited Tlx Cu3 - x Se2 films were characterized by scanning electron microscopy, X-ray diffraction (with Rietveld refinement) and energy dispersive X-ray spectroscopy. They showed interesting variation of composition (x =1.1, 1.2, and 1.25) and morphology as function of the electrodeposition potential, electrolytic bath temperature and thermal treatment.
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Format: | Digital revista |
Language: | English |
Published: |
Sociedade Brasileira de Química
2018
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Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-50532018001202449 |
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