Neutron absorbed dose in a pacemaker CMOS

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor, has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1:522 x 10-17 Gy per neutron emitted by the source.

Bibliographic Details

Main Authors:	Borja-Hernández,C.G., Guzmán-García,K.A., Valero-Luna,C., Bañuelos-Frías,A., Paredes-Gutiérrez,L., Hernández-Dávila,V.M., Vega-Carrillo,H.R.
Format:	Digital revista
Language:	English
Published:	Sociedad Mexicana de Física 2012
Online Access:	http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2012000300005
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