Effect of pressure on the electrical properties of GaSe/InSe heterocontacts

Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor - insulator - semiconductor) model. Using this model we were able to explain the current - voltage dependence. It was found that the modification of heteroboundary significantly affects the electric transport.

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Bibliographic Details
Main Author: Vorobets,M.O
Format: Digital revista
Language:English
Published: Sociedad Mexicana de Física 2010
Online Access:http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2010000600002
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