Effect of pressure on the electrical properties of GaSe/InSe heterocontacts
Barrier structures were produced using optical contact between the indium and gallium selenides. The effect of mechanical pressure ranging from 0 to 100 kPa on the electrical properties of the GaSe/InSe heterocontacts was investigated. The data was analyzed assuming the SIS (semiconductor - insulator - semiconductor) model. Using this model we were able to explain the current - voltage dependence. It was found that the modification of heteroboundary significantly affects the electric transport.
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedad Mexicana de Física
2010
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| Online Access: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2010000600002 |
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