Optical Properties of Semiconductors [electronic resource] /

Radiation Emitted from Semiconductor Lasers in Strong Magnetic Fields and under High Hydrostatic Pressures -- I Influence of Magnetic Fields and High Pressures on Energy Spectra of Semiconductors -- §1. Influence of Magnetic Fields on Energy Structure of III–V and IV–VI Semiconductor Compounds -- §2. Influence of Pressure on Energy Structures of III–V and IV–VI Compounds -- §3. Characteristics of Semiconductor Laser Operation Affected by Variation of Temperature, Pressure, and Magnetic Field -- II Experimental Method -- §1. Apparatus for Excitation of Injection Lasers and Recording of Emission Spectra -- §2. Q-Switched CO2 Laser -- §3. Technique Used in Low-Tempe rature Magnetooptic Investigations at Infrared Wavelengths -- §4. Apparatus Used in Optical Measurements at Infrared Wavelengths under High Hydrostatic Pressures at 77°K -- §5. Zinc- and Copper-Doped Germanium Infrared-Radiation Detectors -- §6. Scanning of Infrared Radiation Emitted from InSb Crystals -- §7. Other Measurements -- III Influence of Magnetic Fields on Emission Spectra of p-n Junctions in InAs, InSb, and PbSe -- §1. Spontaneous and Coherent Radiation Emitted from InAs Injection Lasers -- §2. Radiation Emitted from InSb Injection Lasers in Strong Magnetic Fields. Position of Light-Emission Region -- §3. Spontaneous and Coherent Radiation Emitted from p-n Junctions in PbSe, -- IV Magnetically Tuned Stimulated Raman Emission from Indium Antimonide -- §1. Raman Scattering of Light by Plasmons and Landau Levels in Semiconductors -- §2. Stimulated Raman Scattering of Light Accompanied by Spin Flip in Indium Antimonide -- §3. Discussion of Results -- V Influence of Pressure on Radiation Emitted from Lead Selenide and Gallium Arsenide Semiconductor Lasers -- §1. Emission Spectra of PbSe Lasers -- §2. Emission Spectra of GaAs Lasers -- §3. Discussion of Results -- Conclusions -- Literature Cited -- Investigation of the Collective Properties of Excitons in Germanium by Long-Wavelength Infrared Spectroscopy Methods -- I Energy Spectra and Collective Properties of Excitons in Semiconductors -- 1. Energy Spectrum of Excitons -- §1. Theoretical Calculations -- §2. Experimental Results -- 2. Collective Properties of Exciton Systems -- §1. Theoretical Representations -- §2. Discussion of Experimental Results -- II Methods used in Far-Infrared Investigations of Excitons in Semiconductors -- §1. Spectroscopic Measurements -- §2. Apparatus Used in Low-Tempe rature Optical Measurements under Interband Excitation Conditions -- §3. Sources of Exciting Radiation -- §4. Thermal Conditions -- III Far-Infrared Resonance Absorption in Condensed Exciton Phase in Germanium -- §1. Absorption Spectra of Intrinsic Germanium -- §2. Discussion of Parameters of Electron —Hole Drops (n0 and ?) -- §3. Temperature Dependence of Resonance Absorption -- §4. Dependence of Resonance Absorption on Excitation Rate -- §5. Resonance Absorption in Doped Germanium -- IV Resonance Luminescence of Condensed Exciton Phase in Germanium -- §1. Experimental Investigation of Resonance Luminescence -- §2. Discussion of Experimental Results. Effective Luminescence Temperature of Drops -- §3. Influence of Inhomogeneous Deformation on Resonance Absorption and Luminescence. Mobility of Electron-Hole Drops -- V Photoionization and Excitation of Free Excitons in Germanium by Submillimeter Radiation -- §1. Photoionization and Excitation Spectra -- §2. Discussion of Experimental Results. Energy Levels of Excitons -- Literature Cited -- Collective Interactions of Excitons and Nonequilibrium Carriers in Gallium Arsenide and Silicon -- I Collective Interactions of Excitons in Semiconductors -- II Measurement Method -- §1. Optical System and Method of Recording Luminescence during Continuous Optical Excitation -- §2. Optical System and Method of Recording Luminescence Due to High-Power Light Pulses -- §3. Temperature Measurement Method -- §4. Determination of Temperature Rise in a Semiconductor during Continuous Optical Excitation -- §5. Determination of Temperature Rise in a Semiconductor during Illumination with High-Power Light Pulses -- III Photoluminescence of Gallium Arsenide -- §1. Excitons in GaAs and Their Role in Radiative Recombination -- §2. Investigation of Luminescence Spectra of GaAs at Different Optical Excitation Rates and Helium Temperatures -- §3. Photoluminescence of GaAs at Temperatures 2–100°K. Investigation of Temperature Dependence of Recombination Radiation Intensity -- §4. Photoluminescence Spectra of GaAs at T = 77°K -- §5. Discussion of Results -- §6. Supplement. Possibility of Existence of Condensate in Pure Epitaxial GaAs Films -- IV Change in Absorption Coefficient of Undoped GaAs Due to Strong Optical Excitation -- V Investigation of Photoluminescence Spectra of Silicon at Different Optical Excitation Rates -- §1. Review of Literature -- §2. Experimental Investigation of the Photoluminescence of Si at Different Optical Excitation Rates -- §3. Photoluminescence Spectra of Si at Different Temperatures. Investigation of the Temperature Dependence of the Luminescence Intensity -- §4. Determination of the Binding Energy of Free Excitons from the Fall of the Luminescence Intensity with Rising Temperature -- §5. Discussion of Experimental Results -- VI Photoelectric Properties of Silicon at High Optical Excitation Rates -- §1. Review of Literature -- §2. Measurement Method -- §3. Photoluminescence Spectra of Si in the Presence of Static Electric Fields. Impact Ionization of Free Excitons -- §4. Kinetics of Recombination Processes in Si -- §5. Investigation of Excitons at High Concentrations in Weak Electric Fields -- Literature Cited.

Bibliographic Details

Main Authors:	Basov, N. G. editor., SpringerLink (Online service)
Format:	Texto biblioteca
Language:	eng
Published:	Boston, MA : Springer US : Imprint: Springer, 1976
Subjects:	Physics., Solid state physics., Spectroscopy., Microscopy., Solid State Physics., Spectroscopy and Microscopy.,
Online Access:	http://dx.doi.org/10.1007/978-1-4615-7548-1
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