Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples

Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples

We present an experimental study of bifurcation diagrams from low frequency current oscillations (LFO) measurements obtained from semi-insulating GaAs samples grown by low temperature molecular beam Epitaxy (LT-MBE). The considered growth temperatures were 215ºC and 265ºC. LFO are considered to be spontaneously generated oscillations under constant applied bias V. These oscillations were measurement and recorded in the form of time series. The bifurcation diagrams were obtained from the sequence of minima as a function of the applied bias. The standard measurement procedure was described elsewhere. As the control parameter, the bias allows the identification of a bifurcation route to chaos.

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Main Authors: Silva,R. L. da, Albuquerque,H. A., Rubinger,R. M., Oliveira,A. G. de, Ribeiro,G. M., Rodrigues,W. N.
Format: Digital revista
Language:English
Published: Sociedade Brasileira de Física 2006
Online Access:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300006
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spelling oai:scielo:S0103-973320060003000062006-07-06Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samplesSilva,R. L. daAlbuquerque,H. A.Rubinger,R. M.Oliveira,A. G. deRibeiro,G. M.Rodrigues,W. N. Low frequency current oscillations GaAs Bifurcation diagrams We present an experimental study of bifurcation diagrams from low frequency current oscillations (LFO) measurements obtained from semi-insulating GaAs samples grown by low temperature molecular beam Epitaxy (LT-MBE). The considered growth temperatures were 215ºC and 265ºC. LFO are considered to be spontaneously generated oscillations under constant applied bias V. These oscillations were measurement and recorded in the form of time series. The bifurcation diagrams were obtained from the sequence of minima as a function of the applied bias. The standard measurement procedure was described elsewhere. As the control parameter, the bias allows the identification of a bifurcation route to chaos.info:eu-repo/semantics/openAccessSociedade Brasileira de FísicaBrazilian Journal of Physics v.36 n.2a 20062006-06-01info:eu-repo/semantics/articletext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300006en10.1590/S0103-97332006000300006
institution SCIELO
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country Brasil
countrycode BR
component Revista
access En linea
databasecode rev-scielo-br
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region America del Sur
libraryname SciELO
language English
format Digital
author Silva,R. L. da
Albuquerque,H. A.
Rubinger,R. M.
Oliveira,A. G. de
Ribeiro,G. M.
Rodrigues,W. N.
spellingShingle Silva,R. L. da
Albuquerque,H. A.
Rubinger,R. M.
Oliveira,A. G. de
Ribeiro,G. M.
Rodrigues,W. N.
Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples
author_facet Silva,R. L. da
Albuquerque,H. A.
Rubinger,R. M.
Oliveira,A. G. de
Ribeiro,G. M.
Rodrigues,W. N.
author_sort Silva,R. L. da
title Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples
title_short Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples
title_full Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples
title_fullStr Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples
title_full_unstemmed Low frequency oscillations and bifurcation diagram in semi-insulating GaAs samples
title_sort low frequency oscillations and bifurcation diagram in semi-insulating gaas samples
description We present an experimental study of bifurcation diagrams from low frequency current oscillations (LFO) measurements obtained from semi-insulating GaAs samples grown by low temperature molecular beam Epitaxy (LT-MBE). The considered growth temperatures were 215ºC and 265ºC. LFO are considered to be spontaneously generated oscillations under constant applied bias V. These oscillations were measurement and recorded in the form of time series. The bifurcation diagrams were obtained from the sequence of minima as a function of the applied bias. The standard measurement procedure was described elsewhere. As the control parameter, the bias allows the identification of a bifurcation route to chaos.
publisher Sociedade Brasileira de Física
publishDate 2006
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300006
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AT oliveiraagde lowfrequencyoscillationsandbifurcationdiagraminsemiinsulatinggaassamples
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