Temperature dependence of the absorption coefficient in doped quantum wells
In this work we present a calculation of the infrared optical absorption coefficient for a Ga1-xAl xAs quantum well (QW) as a function of donor impurity concentration, compensation and temperature. We treat this problem using a Self-Consistent Method (SC) calculation taking into account donors as major impurities. The Variational Method was used to obtain the ground state wave-function of an electron bound to a donor impurity in a QW. The results show a shift of energy in the absorption coefficient.
Saved in:
Main Authors: | Baldan,M.R., Serra,R.M., Emmel,P.D., Silva,A. Ferreira da |
---|---|
Format: | Digital revista |
Language: | English |
Published: |
Sociedade Brasileira de Física
1999
|
Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400021 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Interband magneto-absorption in narrow-gap semiconductor quantum wells
by: López-Richard,V., et al.
Published: (1999) -
Low-temperature electron mobility in parabolic quantum wells
by: Seraide,R. M., et al.
Published: (2002) -
Subband structure of II-VI modulation-doped magnetic quantum wells
by: Freire,Henrique J. P., et al.
Published: (2002) -
Subband structure of II-VI modulation-doped magnetic quantum wells
by: Freire,Henrique J. P., et al.
Published: (2003) -
Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures
by: Lima,F. M. S., et al.
Published: (2006)