Characterization of SiC thin films deposited by HiPIMS
In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.
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ABM, ABC, ABPol
2014
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oai:scielo:S1516-143920140002000272014-05-06Characterization of SiC thin films deposited by HiPIMSLeal,GabrielaCampos,Tiago Moreira BastosSilva Sobrinho,Argemiro Soares daPessoa,Rodrigo SávioMaciel,Homero SantiagoMassi,Marcos HiPIMS thin film silicon carbide In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.info:eu-repo/semantics/openAccessABM, ABC, ABPolMaterials Research v.17 n.2 20142014-04-01info:eu-repo/semantics/articletext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000200027en10.1590/S1516-14392014005000038 |
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Leal,Gabriela Campos,Tiago Moreira Bastos Silva Sobrinho,Argemiro Soares da Pessoa,Rodrigo Sávio Maciel,Homero Santiago Massi,Marcos |
| spellingShingle |
Leal,Gabriela Campos,Tiago Moreira Bastos Silva Sobrinho,Argemiro Soares da Pessoa,Rodrigo Sávio Maciel,Homero Santiago Massi,Marcos Characterization of SiC thin films deposited by HiPIMS |
| author_facet |
Leal,Gabriela Campos,Tiago Moreira Bastos Silva Sobrinho,Argemiro Soares da Pessoa,Rodrigo Sávio Maciel,Homero Santiago Massi,Marcos |
| author_sort |
Leal,Gabriela |
| title |
Characterization of SiC thin films deposited by HiPIMS |
| title_short |
Characterization of SiC thin films deposited by HiPIMS |
| title_full |
Characterization of SiC thin films deposited by HiPIMS |
| title_fullStr |
Characterization of SiC thin films deposited by HiPIMS |
| title_full_unstemmed |
Characterization of SiC thin films deposited by HiPIMS |
| title_sort |
characterization of sic thin films deposited by hipims |
| description |
In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity. |
| publisher |
ABM, ABC, ABPol |
| publishDate |
2014 |
| url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000200027 |
| work_keys_str_mv |
AT lealgabriela characterizationofsicthinfilmsdepositedbyhipims AT campostiagomoreirabastos characterizationofsicthinfilmsdepositedbyhipims AT silvasobrinhoargemirosoaresda characterizationofsicthinfilmsdepositedbyhipims AT pessoarodrigosavio characterizationofsicthinfilmsdepositedbyhipims AT macielhomerosantiago characterizationofsicthinfilmsdepositedbyhipims AT massimarcos characterizationofsicthinfilmsdepositedbyhipims |
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1756420538910113792 |