Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy

Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy

We have investigated the optical and the structural properties of strained In1-xGaxAsyP1-y/InP and strain compensated In1-xGaxAsyP1-y/In1-zGazAsqP1-q/InP multi-quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy at different growth conditions. Our results indicate an increase of the compositional fluctuation of quaternary materials as the alloy composition moves from the outer spinodal isotherm into the miscibility gap region. In1-xGaxAsyP1-y layers grown at high tensile strained values exhibit a three-dimensional-like growth mode. Strain compensated structures revealed the presence of a broad photoluminescence emission band below the fundamental quantum well transition, well defined elongated features along the [011] direction and interface undulations. All these effects were found to be strongly dependent on the growth temperature and the number of wells.

Saved in:
Bibliographic Details
Main Authors: Carvalho Jr,Wilson de, Bernussi,Ayrton André, Furtado,Mário Tosi, Gobbi,Ângelo Luiz, Cotta,Mônica A.
Format: Digital revista
Language:English
Published: ABM, ABC, ABPol 1999
Online Access:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200002
Tags: Add Tag
No Tags, Be the first to tag this record!
id oai:scielo:S1516-14391999000200002
record_format ojs
spelling oai:scielo:S1516-143919990002000022000-01-21Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxyCarvalho Jr,Wilson deBernussi,Ayrton AndréFurtado,Mário TosiGobbi,Ângelo LuizCotta,Mônica A. InGaAsP InP MOCVD strain multiple quantum wells epitaxial growth We have investigated the optical and the structural properties of strained In1-xGaxAsyP1-y/InP and strain compensated In1-xGaxAsyP1-y/In1-zGazAsqP1-q/InP multi-quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy at different growth conditions. Our results indicate an increase of the compositional fluctuation of quaternary materials as the alloy composition moves from the outer spinodal isotherm into the miscibility gap region. In1-xGaxAsyP1-y layers grown at high tensile strained values exhibit a three-dimensional-like growth mode. Strain compensated structures revealed the presence of a broad photoluminescence emission band below the fundamental quantum well transition, well defined elongated features along the [011] direction and interface undulations. All these effects were found to be strongly dependent on the growth temperature and the number of wells.info:eu-repo/semantics/openAccessABM, ABC, ABPolMaterials Research v.2 n.2 19991999-04-01info:eu-repo/semantics/articletext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200002en10.1590/S1516-14391999000200002
institution SCIELO
collection OJS
country Brasil
countrycode BR
component Revista
access En linea
databasecode rev-scielo-br
tag revista
region America del Sur
libraryname SciELO
language English
format Digital
author Carvalho Jr,Wilson de
Bernussi,Ayrton André
Furtado,Mário Tosi
Gobbi,Ângelo Luiz
Cotta,Mônica A.
spellingShingle Carvalho Jr,Wilson de
Bernussi,Ayrton André
Furtado,Mário Tosi
Gobbi,Ângelo Luiz
Cotta,Mônica A.
Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
author_facet Carvalho Jr,Wilson de
Bernussi,Ayrton André
Furtado,Mário Tosi
Gobbi,Ângelo Luiz
Cotta,Mônica A.
author_sort Carvalho Jr,Wilson de
title Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
title_short Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
title_full Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
title_fullStr Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
title_full_unstemmed Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
title_sort strained in1-xgaxasyp1-y/inp quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy
description We have investigated the optical and the structural properties of strained In1-xGaxAsyP1-y/InP and strain compensated In1-xGaxAsyP1-y/In1-zGazAsqP1-q/InP multi-quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy at different growth conditions. Our results indicate an increase of the compositional fluctuation of quaternary materials as the alloy composition moves from the outer spinodal isotherm into the miscibility gap region. In1-xGaxAsyP1-y layers grown at high tensile strained values exhibit a three-dimensional-like growth mode. Strain compensated structures revealed the presence of a broad photoluminescence emission band below the fundamental quantum well transition, well defined elongated features along the [011] direction and interface undulations. All these effects were found to be strongly dependent on the growth temperature and the number of wells.
publisher ABM, ABC, ABPol
publishDate 1999
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200002
work_keys_str_mv AT carvalhojrwilsonde strainedin1xgaxasyp1yinpquantumwellheterostructuresgrownbylowpressuremetalorganicvaporphaseepitaxy
AT bernussiayrtonandre strainedin1xgaxasyp1yinpquantumwellheterostructuresgrownbylowpressuremetalorganicvaporphaseepitaxy
AT furtadomariotosi strainedin1xgaxasyp1yinpquantumwellheterostructuresgrownbylowpressuremetalorganicvaporphaseepitaxy
AT gobbiangeloluiz strainedin1xgaxasyp1yinpquantumwellheterostructuresgrownbylowpressuremetalorganicvaporphaseepitaxy
AT cottamonicaa strainedin1xgaxasyp1yinpquantumwellheterostructuresgrownbylowpressuremetalorganicvaporphaseepitaxy
_version_ 1756420248471339008

Similar Items