Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering

Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering

In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.

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Main Authors: Toku,H., Pessoa,R.S., Maciel,H.S., Massi,M., Mengui,U.A.
Format: Digital revista
Language:English
Published: Sociedade Brasileira de Física 2010
Online Access:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015
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spelling oai:scielo:S0103-973320100003000152010-09-27Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputteringToku,H.Pessoa,R.S.Maciel,H.S.Massi,M.Mengui,U.A. titanium dioxide magnetron sputtering X- ray diffraction Atomic force microscopy In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.info:eu-repo/semantics/openAccessSociedade Brasileira de FísicaBrazilian Journal of Physics v.40 n.3 20102010-09-01info:eu-repo/semantics/articletext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015en10.1590/S0103-97332010000300015
institution SCIELO
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country Brasil
countrycode BR
component Revista
access En linea
databasecode rev-scielo-br
tag revista
region America del Sur
libraryname SciELO
language English
format Digital
author Toku,H.
Pessoa,R.S.
Maciel,H.S.
Massi,M.
Mengui,U.A.
spellingShingle Toku,H.
Pessoa,R.S.
Maciel,H.S.
Massi,M.
Mengui,U.A.
Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
author_facet Toku,H.
Pessoa,R.S.
Maciel,H.S.
Massi,M.
Mengui,U.A.
author_sort Toku,H.
title Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_short Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_full Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_fullStr Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_full_unstemmed Influence of process parameters on the growth of pure-phase anatase and rutile TiO2 thin films deposited by low temperature reactive magnetron sputtering
title_sort influence of process parameters on the growth of pure-phase anatase and rutile tio2 thin films deposited by low temperature reactive magnetron sputtering
description In this work is investigated the optimal conditions for deposition of pure- phase anatase and rutile thin films prepared at low temperatures (less than 150ºC) by reactive dc magnetron sputtering onto well- cleaned p- type Si substrates. For this, the variation of deposition plasma parameters as substrate- to- target distance, total gas pressure, oxygen concentration, and substrate bias were studied and correlated with the characteristics of the deposited films. The XRD analysis indicates the formation of pure rutile phase when the substrate is biased at voltages between - 200 and - 300 V. Pure anatase phase is only attained when the total pressure is higher than 0.7 Pa. Moreover, it's noticeable a strong dependence of surface roughness with parameters studied.
publisher Sociedade Brasileira de Física
publishDate 2010
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332010000300015
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AT pessoars influenceofprocessparametersonthegrowthofpurephaseanataseandrutiletio2thinfilmsdepositedbylowtemperaturereactivemagnetronsputtering
AT macielhs influenceofprocessparametersonthegrowthofpurephaseanataseandrutiletio2thinfilmsdepositedbylowtemperaturereactivemagnetronsputtering
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