Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure

The calculation of the electronic energy levels of n-type delta-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10(13) cm-2.

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Main Authors: Mora-Ramos,M. E., Duque,C. A.
Format: Digital revista
Language:English
Published: Sociedade Brasileira de Física 2006
Online Access:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600018
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spelling oai:scielo:S0103-973320060006000182006-12-04Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressureMora-Ramos,M. E.Duque,C. A. GaAs Delta-doping Hydrostatic pressure The calculation of the electronic energy levels of n-type delta-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10(13) cm-2.info:eu-repo/semantics/openAccessSociedade Brasileira de FísicaBrazilian Journal of Physics v.36 n.3b 20062006-09-01info:eu-repo/semantics/articletext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600018en10.1590/S0103-97332006000600018
institution SCIELO
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country Brasil
countrycode BR
component Revista
access En linea
databasecode rev-scielo-br
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region America del Sur
libraryname SciELO
language English
format Digital
author Mora-Ramos,M. E.
Duque,C. A.
spellingShingle Mora-Ramos,M. E.
Duque,C. A.
Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure
author_facet Mora-Ramos,M. E.
Duque,C. A.
author_sort Mora-Ramos,M. E.
title Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure
title_short Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure
title_full Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure
title_fullStr Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure
title_full_unstemmed Electronic states in n-type GaAs delta-doped quantum wells under hydrostatic pressure
title_sort electronic states in n-type gaas delta-doped quantum wells under hydrostatic pressure
description The calculation of the electronic energy levels of n-type delta-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account specially when the host material becomes an indirect gap one. The results suggest that under the applied pressure regime the GaAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 10(13) cm-2.
publisher Sociedade Brasileira de Física
publishDate 2006
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600018
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