Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells

Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells

We investigate the con.nement properties of GaN/Al xGa1-xN zincblende and wurtzite nonabrupt quantum wells (QWs) in an electric field. It is shown that their Stark shifts decrease considerably when the existence of nonabrupt interfaces are considered. Confined excitons in 50 Å wide GaN/Al0.3Ga0.7N zincblende and wurtzite quantum wells (QWs) can exist up to electric field intensities of the order of 500 kV/cm. In all cases, the electric field effects in GaN/Al xGa1-xN wurtzite QWs are stronger than in similar zincblende QWs.

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Main Authors: Wang,H., Farias,G. A., Freire,V. N.
Format: Digital revista
Language:English
Published: Sociedade Brasileira de Física 1999
Online Access:http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400010
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spelling oai:scielo:S0103-973319990004000102001-02-23Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wellsWang,H.Farias,G. A.Freire,V. N.We investigate the con.nement properties of GaN/Al xGa1-xN zincblende and wurtzite nonabrupt quantum wells (QWs) in an electric field. It is shown that their Stark shifts decrease considerably when the existence of nonabrupt interfaces are considered. Confined excitons in 50 Å wide GaN/Al0.3Ga0.7N zincblende and wurtzite quantum wells (QWs) can exist up to electric field intensities of the order of 500 kV/cm. In all cases, the electric field effects in GaN/Al xGa1-xN wurtzite QWs are stronger than in similar zincblende QWs.info:eu-repo/semantics/openAccessSociedade Brasileira de FísicaBrazilian Journal of Physics v.29 n.4 19991999-12-01info:eu-repo/semantics/articletext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400010en10.1590/S0103-97331999000400010
institution SCIELO
collection OJS
country Brasil
countrycode BR
component Revista
access En linea
databasecode rev-scielo-br
tag revista
region America del Sur
libraryname SciELO
language English
format Digital
author Wang,H.
Farias,G. A.
Freire,V. N.
spellingShingle Wang,H.
Farias,G. A.
Freire,V. N.
Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
author_facet Wang,H.
Farias,G. A.
Freire,V. N.
author_sort Wang,H.
title Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_short Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_full Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_fullStr Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_full_unstemmed Electric field effects on the confinement properties of GaN/Al x Ga1-xN zincblende and wurtzite nonabrupt quantum wells
title_sort electric field effects on the confinement properties of gan/al x ga1-xn zincblende and wurtzite nonabrupt quantum wells
description We investigate the con.nement properties of GaN/Al xGa1-xN zincblende and wurtzite nonabrupt quantum wells (QWs) in an electric field. It is shown that their Stark shifts decrease considerably when the existence of nonabrupt interfaces are considered. Confined excitons in 50 Å wide GaN/Al0.3Ga0.7N zincblende and wurtzite quantum wells (QWs) can exist up to electric field intensities of the order of 500 kV/cm. In all cases, the electric field effects in GaN/Al xGa1-xN wurtzite QWs are stronger than in similar zincblende QWs.
publisher Sociedade Brasileira de Física
publishDate 1999
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400010
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AT fariasga electricfieldeffectsontheconfinementpropertiesofganalxga1xnzincblendeandwurtzitenonabruptquantumwells
AT freirevn electricfieldeffectsontheconfinementpropertiesofganalxga1xnzincblendeandwurtzitenonabruptquantumwells
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