Interface Morphology of Gen / Si Quantum Wells Studied with Raman Spectroscopy and High Resolution X-Ray Diffraction
We report Raman scattering and high-resolution X-ray diffraction measurements performed on a series of MBE-grown Si / Gen / Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si / Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2D Ge layers, bounded by interfacial alloy layers, for coverages superior to 4M Ls.
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| Main Authors: | , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedade Brasileira de Física
1997
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| Online Access: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400026 |
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