First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN) n superlattices
Abstract Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN) n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN) n SL s in both growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN) n such as light-emitting applications, this theoretical study can help the experimental measurements.
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Sociedad Mexicana de Física
2021
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oai:scielo:S0035-001X20210001000022022-01-27First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN) n superlatticesBachir Bouiadjra,B.Mehnane,N.Oukli,N. Gallium nitride growth axis InN/GaN superlattices optical properties Abstract Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN) n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN) n SL s in both growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN) n such as light-emitting applications, this theoretical study can help the experimental measurements.info:eu-repo/semantics/openAccessSociedad Mexicana de FísicaRevista mexicana de física v.67 n.1 20212021-02-01info:eu-repo/semantics/articletext/htmlhttp://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2021000100002en10.31349/revmexfis.67.7 |
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Bachir Bouiadjra,B. Mehnane,N. Oukli,N. |
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Bachir Bouiadjra,B. Mehnane,N. Oukli,N. First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN) n superlattices |
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Bachir Bouiadjra,B. Mehnane,N. Oukli,N. |
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Bachir Bouiadjra,B. |
| title |
First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN) n superlattices |
| title_short |
First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN) n superlattices |
| title_full |
First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN) n superlattices |
| title_fullStr |
First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN) n superlattices |
| title_full_unstemmed |
First principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (InN)/(GaN) n superlattices |
| title_sort |
first principles calculation of structural, electronic and optical properties of (001) and (110) growth axis (inn)/(gan) n superlattices |
| description |
Abstract Based on the full potential linear muffin-tin orbitals (FPLMTO) calculation within density functional theory, we systematically investigate the electronic and optical properties of (100) and (110)-oriented (InN)/(GaN) n zinc-blende superlattice with one InN monolayer and with different numbers of GaN monolayers. Specifically, the electronic band structure calculations and their related features, like the absorption coefficient and refractive index of these systems are computed over a wide photon energy scale up to 20 eV. The effect of periodicity layer numbers n on the band gaps and the optical activity of (InN)/(GaN) n SL s in both growth axis (001) and (110) are examined and compared. Because of prospective optical aspects of (InN)/(GaN) n such as light-emitting applications, this theoretical study can help the experimental measurements. |
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Sociedad Mexicana de Física |
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2021 |
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http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2021000100002 |
| work_keys_str_mv |
AT bachirbouiadjrab firstprinciplescalculationofstructuralelectronicandopticalpropertiesof001and110growthaxisinngannsuperlattices AT mehnanen firstprinciplescalculationofstructuralelectronicandopticalpropertiesof001and110growthaxisinngannsuperlattices AT ouklin firstprinciplescalculationofstructuralelectronicandopticalpropertiesof001and110growthaxisinngannsuperlattices |
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