Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

Abstract Serrated GaN nanowires were synthesized on the sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by a liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An ultraviolet detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has a different response under different wavelength light illumination and has the maximum response under 365 nm ultraviolet light.

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Main Authors: Ding,Wenhao, Meng,Xianquan
Format: Digital revista
Language:English
Published: Sociedad Mexicana de Física 2020
Online Access:http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2020000400490
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spelling oai:scielo:S0035-001X20200004004902022-01-27Growth and UV detector of serrated GaN nanowires by chemical vapor depositionDing,WenhaoMeng,Xianquan Chemical vapor deposition GaN nanowires copper nanowires ultraviolet detector Abstract Serrated GaN nanowires were synthesized on the sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by a liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An ultraviolet detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has a different response under different wavelength light illumination and has the maximum response under 365 nm ultraviolet light.info:eu-repo/semantics/openAccessSociedad Mexicana de FísicaRevista mexicana de física v.66 n.4 20202020-08-01info:eu-repo/semantics/articletext/htmlhttp://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2020000400490en10.31349/revmexfis.66.490
institution SCIELO
collection OJS
country México
countrycode MX
component Revista
access En linea
databasecode rev-scielo-mx
tag revista
region America del Norte
libraryname SciELO
language English
format Digital
author Ding,Wenhao
Meng,Xianquan
spellingShingle Ding,Wenhao
Meng,Xianquan
Growth and UV detector of serrated GaN nanowires by chemical vapor deposition
author_facet Ding,Wenhao
Meng,Xianquan
author_sort Ding,Wenhao
title Growth and UV detector of serrated GaN nanowires by chemical vapor deposition
title_short Growth and UV detector of serrated GaN nanowires by chemical vapor deposition
title_full Growth and UV detector of serrated GaN nanowires by chemical vapor deposition
title_fullStr Growth and UV detector of serrated GaN nanowires by chemical vapor deposition
title_full_unstemmed Growth and UV detector of serrated GaN nanowires by chemical vapor deposition
title_sort growth and uv detector of serrated gan nanowires by chemical vapor deposition
description Abstract Serrated GaN nanowires were synthesized on the sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by a liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An ultraviolet detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has a different response under different wavelength light illumination and has the maximum response under 365 nm ultraviolet light.
publisher Sociedad Mexicana de Física
publishDate 2020
url http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2020000400490
work_keys_str_mv AT dingwenhao growthanduvdetectorofserratedgannanowiresbychemicalvapordeposition
AT mengxianquan growthanduvdetectorofserratedgannanowiresbychemicalvapordeposition
_version_ 1756220044287672321

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