GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate

GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate

Abstract GaN nanowires and nanotubes have been successfully synthesized via the simple chemical vapor deposition method. NH3 flow rate was found to be a crucial factor in the synthesis of different type of GaN which affects the shape and the diameter of generated GaN nanostructures. X-ray diffraction confirms that GaN nanowires grown on Si(111) substrate under 900o C and with NH3 flow rate of 50 sccm presents the preferred orientation growth in the (002) direction. It is beneficial to the growth of nanostructure through catalyst annealing. Transmission electron microscopy and scanning electron microscopy were used to measure the size and structures of the samples.

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Main Authors: Li,Pengan, Liu,Yihe, Meng,Xianquan
Format: Digital revista
Language:English
Published: Sociedad Mexicana de Física 2016
Online Access:http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2016000300219
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spelling oai:scielo:S0035-001X20160003002192017-05-09GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rateLi,PenganLiu,YiheMeng,Xianquan GaN CVD nanotube TEM Abstract GaN nanowires and nanotubes have been successfully synthesized via the simple chemical vapor deposition method. NH3 flow rate was found to be a crucial factor in the synthesis of different type of GaN which affects the shape and the diameter of generated GaN nanostructures. X-ray diffraction confirms that GaN nanowires grown on Si(111) substrate under 900o C and with NH3 flow rate of 50 sccm presents the preferred orientation growth in the (002) direction. It is beneficial to the growth of nanostructure through catalyst annealing. Transmission electron microscopy and scanning electron microscopy were used to measure the size and structures of the samples.info:eu-repo/semantics/openAccessSociedad Mexicana de FísicaRevista mexicana de física v.62 n.3 20162016-06-01info:eu-repo/semantics/articletext/htmlhttp://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2016000300219en
institution SCIELO
collection OJS
country México
countrycode MX
component Revista
access En linea
databasecode rev-scielo-mx
tag revista
region America del Norte
libraryname SciELO
language English
format Digital
author Li,Pengan
Liu,Yihe
Meng,Xianquan
spellingShingle Li,Pengan
Liu,Yihe
Meng,Xianquan
GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate
author_facet Li,Pengan
Liu,Yihe
Meng,Xianquan
author_sort Li,Pengan
title GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate
title_short GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate
title_full GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate
title_fullStr GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate
title_full_unstemmed GaN nanowires and nanotubes growth by chemical vapor deposition method at different NH3 flow rate
title_sort gan nanowires and nanotubes growth by chemical vapor deposition method at different nh3 flow rate
description Abstract GaN nanowires and nanotubes have been successfully synthesized via the simple chemical vapor deposition method. NH3 flow rate was found to be a crucial factor in the synthesis of different type of GaN which affects the shape and the diameter of generated GaN nanostructures. X-ray diffraction confirms that GaN nanowires grown on Si(111) substrate under 900o C and with NH3 flow rate of 50 sccm presents the preferred orientation growth in the (002) direction. It is beneficial to the growth of nanostructure through catalyst annealing. Transmission electron microscopy and scanning electron microscopy were used to measure the size and structures of the samples.
publisher Sociedad Mexicana de Física
publishDate 2016
url http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2016000300219
work_keys_str_mv AT lipengan gannanowiresandnanotubesgrowthbychemicalvapordepositionmethodatdifferentnh3flowrate
AT liuyihe gannanowiresandnanotubesgrowthbychemicalvapordepositionmethodatdifferentnh3flowrate
AT mengxianquan gannanowiresandnanotubesgrowthbychemicalvapordepositionmethodatdifferentnh3flowrate
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