Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis
The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450°C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO2 on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250°C showed field-effect mobilities around of 0.05 cm²/Vs and threshold voltages of 8 V.
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Sociedad Mexicana de Física
2015
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| Online Access: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2015000200007 |
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oai:scielo:S0035-001X20150002000072015-05-12Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysisDominguez-Jimenez,M.A.Flores-Gracia,F.Luna-Flores,A.Martinez-Juarez,J.Luna-Lopez,J.A.Alcantara-Iniesta,S.Rosales-Quintero,P.Reyes-Betanzo,C. ZnO electrical properties thin film transistors The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450°C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO2 on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250°C showed field-effect mobilities around of 0.05 cm²/Vs and threshold voltages of 8 V.info:eu-repo/semantics/openAccessSociedad Mexicana de FísicaRevista mexicana de física v.61 n.2 20152015-04-01info:eu-repo/semantics/articletext/htmlhttp://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2015000200007en |
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Dominguez-Jimenez,M.A. Flores-Gracia,F. Luna-Flores,A. Martinez-Juarez,J. Luna-Lopez,J.A. Alcantara-Iniesta,S. Rosales-Quintero,P. Reyes-Betanzo,C. |
| spellingShingle |
Dominguez-Jimenez,M.A. Flores-Gracia,F. Luna-Flores,A. Martinez-Juarez,J. Luna-Lopez,J.A. Alcantara-Iniesta,S. Rosales-Quintero,P. Reyes-Betanzo,C. Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis |
| author_facet |
Dominguez-Jimenez,M.A. Flores-Gracia,F. Luna-Flores,A. Martinez-Juarez,J. Luna-Lopez,J.A. Alcantara-Iniesta,S. Rosales-Quintero,P. Reyes-Betanzo,C. |
| author_sort |
Dominguez-Jimenez,M.A. |
| title |
Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis |
| title_short |
Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis |
| title_full |
Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis |
| title_fullStr |
Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis |
| title_full_unstemmed |
Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis |
| title_sort |
thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis |
| description |
The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450°C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO2 on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250°C showed field-effect mobilities around of 0.05 cm²/Vs and threshold voltages of 8 V. |
| publisher |
Sociedad Mexicana de Física |
| publishDate |
2015 |
| url |
http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2015000200007 |
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