Superconducting logic element

[EN] A superconducting logic element (1), comprising: a superconducting tunnel junction (10) comprising a first (20) and a second (30) superconductor; a first insulating ferromagnet (40) in contact with the first superconductor (20), configured to generate by magnetic proximity effect a predetermined density of spin-split states in the first superconductor (20); a second insulating ferromagnet (50) in contact with the second superconductor (30), configured to generate by magnetic proximity effect a predetermined density of spin-split states in the second superconductor (30); a writing element (120), configured to apply a writing current to at least a superconductor (20,30,70,75) in contact with one of the first or second insulating ferromagnet (40,50), so that the first insulating ferromagnet (40) in contact with the first superconductor (20) and the second insulating ferromagnet (50) in contact with the second superconductor (30) commute, by the magnetic field (165,185) generated by the applied writing current (160,180), between a state with parallel magnetization (150) to a state with antiparallel magnetization (170) with respect to each other; a reading element (100), configured to provide a reading voltage bias (110) between the first and the second superconductor (20,30) and to provide a measurement signal of a dissipative high- or low-conductance state through the superconducting tunnel junction, responsive to the parallel or antiparallel magnetization, by absolute spin valve effect, wherein the superconducting tunnel junction (10) consists of the first (20) or second (30) superconductor among which an insulating layer is arranged with tunnel barrier function, the insulating layer selected between a layer (60) selected from the group consisting of: AIOx, AIN, and the first (40) or second (50) insulating ferromagnet