New Developments in Semiconductor Physics [electronic resource] : Proceedings of the International Summer School Held in Szeged, Hungary July 1–6, 1979 /

Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors -- Optically detected magnetic resonance studies of semiconductors -- Deep level spectroscopy in semicounductors by optical excitation -- Depleted layer spectroscopy -- Luminescence of chromium in gallium arsenide -- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K -- Properties of an extended defect in GaAs.62P.38 -- Large defect-lattice relaxation phenomena in solids -- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In) -- Electron-phonon interaction: Polaron transport -- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb -- Photoluminescence in amorphous semiconductors -- Man-made semiconductor superlattices -- The localized states of interfaces and their physical models -- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids -- Is there a minimum linewidth in integrated circuits?.

Bibliographic Details

Main Authors:	Beleznay, Ferenc. editor., Ferenczi, György. editor., Giber, János. editor., SpringerLink (Online service)
Format:	Texto biblioteca
Language:	eng
Published:	Berlin, Heidelberg : Springer Berlin Heidelberg, 1980
Subjects:	Physics., Electronic circuits., Electronic Circuits and Devices.,
Online Access:	http://dx.doi.org/10.1007/3-540-09988-3
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