Photoluminescence and cathodoluminescence characteristics of SiO2 and SRO films implanted with Si
Abstract Silicon rich oxide films (SRO) were obtained by silicon implantation in silicon dioxide and PE - LPCVD techniques. Also, PECVD and LPCVD SRO films were implanted with silicon to get super-enriched SRO. Photo- and Cathodo- Luminescence (PL and CL) studies of these materials are presented. All the samples show similar bands related with an excess of silicon, but with different behavior in the intensity of the signal. PL results from silicon implanted LPCVD films show an emission stronger than the emission from the other films under study. The strongest PL intensity is related with an optimum annealing time and an optimum silicon excess, and consequently with an optimum size of the nanocrystals.
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| Main Authors: | , , , , |
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| Format: | Digital revista |
| Language: | English |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2005
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| Online Access: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S1665-35212005000200007 |
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